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DST3904DJ
40V DUAL NPN SURFACE MOUNT TRANSISTOR
Features
* * * * * * * VCEO = 40V IC = 200mA Epitaxial Planar Die Construction Ideally Suited for Automated Assembly Processes Lead, Halogen and Antimony Free, RoHS Compliant (Note 1) "Green" Device (Note 2) Ultra Small Package
Mechanical Data
* * * * * Case: SOT-963 Case Material: Molded Plastic, "Green" Molding Compound. UL Flammability Classification Rating 94V-0 Moisture Sensitivity: Level 1 per J-STD-020 Terminals: Finish Matte Tin annealed over Copper leadframe. Solderable per MIL-STD-202, Method 208 Weight: 0.0027 grams (approximate)
NEW PRODUCT
SOT-963
Top View
Device Schematic
Ordering Information
Device DST3904DJ-7
Notes:
Packaging SOT-963
Shipping 10,000/Tape & Reel
1. No purposefully added lead. Halogen and Antimony Free. 2. Diodes Inc's "Green" Policy can be found on our website at http://www.diodes.com
Marking Information
T8
T8 = Product Type Marking Code
DST3904DJ
Document number: DS32038 Rev. 2 - 2
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April 2010
(c) Diodes Incorporated
DST3904DJ Maximum Ratings
@TA = 25C unless otherwise specified Symbol VCBO VCEO VEBO IC Value 60 40 6.0 200 Unit V V V mA
NEW PRODUCT
Characteristic Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current - Continuous (Note 3)
Thermal Characteristics
Characteristic Power Dissipation (Note 3) Thermal Resistance, Junction to Ambient (Note 3) Operating and Storage Temperature Range
Notes: 3. Device mounted on FR-4 PCB with minimum recommended pad layout.
Symbol PD RJA TJ, TSTG
Value 300 417 -55 to +150
Unit mW C/W C
1 r(t), TRANSIENT THERMAL RESISTANCE
D = 0.7 D = 0.5 D = 0.3
0.1
D = 0.1 D = 0.9 D = 0.05 RJA(t) = r(t) * RJA RJA = 370C/W P(pk)
D = 0.02
t1
0.01
D = 0.01 D = 0.005
t2 T J - T A = P * RJA(t) Duty Cycle, D = t 1/t2
D = Single Pulse
0.001 0.000001
0.00001
0.0001
0.001
0.01 0.1 1 t1, PULSE DURATION TIME (s) Fig. 1 Transient Thermal Response
0.4
10
100
1,000
1,000 P(pk), PEAK TRANSIENT POWER (W)
100
RJA(t) = r(t) * RJA RJA = 370C/W TJ - TA = P * RJA(t) Duty Cycle, D = t 1/t2
PD, POWER DISSIPATION (W)
Single Pulse
0.3
Note 3
10
0.2
1
0.1
0.1 0.00001 0.001 0.1 10 1,000 t1, PULSE DURATION TIME (s) Fig. 2 Single Pulse Maximum Power Dissipation
0 0 20 40 60 80 100 120 140 160 TA, AMBIENT TEMPERATURE (C) Fig. 3 Power Dissipation vs. Ambient Temperature
DST3904DJ
Document number: DS32038 Rev. 2 - 2
2 of 6 www.diodes.com
April 2010
(c) Diodes Incorporated
DST3904DJ Electrical Characteristics
@TA = 25C unless otherwise specified Symbol V(BR)CBO V(BR)CEO V(BR)EBO ICEX IBL Min 60 40 6.0 40 70 100 60 30 0.65 1.0 0.5 100 1.0 300 Max 50 50 300 0.20 0.30 0.85 0.95 4.0 8.5 10 8.0 400 40 35 35 200 50 Unit V V V nA nA Test Condition IC = 10A, IE = 0 IC = 1.0mA, IB = 0 IE = 10A, IC = 0 VCE = 30V, VEB(OFF) = 3.0V VCE = 30V, VEB(OFF) = 3.0V IC = 100A, VCE = 1.0V IC = 1.0mA, VCE = 1.0V IC = 10mA, VCE = 1.0V IC = 50mA, VCE = 1.0V IC = 100mA, VCE = 1.0V IC = 10mA, IB = 1.0mA IC = 50mA, IB = 5.0mA IC = 10mA, IB = 1.0mA IC = 50mA, IB = 5.0mA VCB = 5.0V, f = 1.0MHz, IE = 0 VEB = 0.5V, f = 1.0MHz, IC = 0 VCE = 10V, IC = 1.0mA, f = 1.0kHz VCE = 20V, IC = 10mA, f = 100MHz VCC = 3.0V, IC = 10mA, VBE(off) = - 0.5V, IB1 = 1.0mA VCC = 3.0V, IC = 10mA, IB1 = IB2 = 1.0mA
NEW PRODUCT
Characteristic OFF CHARACTERISTICS Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage (Note 4) Emitter-Base Breakdown Voltage Collector Cutoff Current Base Cutoff Current ON CHARACTERISTICS (Note 4)
DC Current Gain
hFE
Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage SMALL SIGNAL CHARACTERISTICS Output Capacitance Input Capacitance Input Impedance Voltage Feedback Ratio Small Signal Current Gain Output Admittance Current Gain-Bandwidth Product SWITCHING CHARACTERISTICS Delay Time Rise Time Storage Time Fall Time
Notes:
VCE(SAT) VBE(SAT) Cobo Cibo hie hre hfe hoe fT td tr ts tf
V V pF pF k -4 x 10 S MHz ns ns ns ns
4. Measured under pulsed conditions. Pulse width = 300s. Duty cycle 2%
0.14
IB = 2mA
400
IB = 1.6mA IB = 1.4mA IB = 1.2mA IB = 1mA IB = 1.8mA
T A = 150C VCE = 5V
0.12 IC, COLLECTOR CURRENT (A) 0.10 0.08 0.06
hFE, DC CURRENT GAIN
300
T A = 125C TA = 85C
IB = 0.8mA IB = 0.6mA IB = 0.4mA
200
T A = 25C
0.04
IB = 0.2mA
100
TA = -55C
0.02 0
0 0.1
0
1 2 3 4 5 VCE, COLLECTOR-EMITTER VOLTAGE (V) Fig. 4 Typical Collector Current vs. Collector-Emitter Voltage
1 10 100 1,000 IC, COLLECTOR CURRENT (mA) Fig. 5 Typical DC Current Gain vs. Collector Current
DST3904DJ
Document number: DS32038 Rev. 2 - 2
3 of 6 www.diodes.com
April 2010
(c) Diodes Incorporated
DST3904DJ
1
IC/IB = 10
1
IC/IB = 20
VCE(SAT), COLLECTOR-EMITTER SATURATION VOLTAGE (V)
VCE(SAT), COLLECTOR-EMITTER SATURATION VOLTAGE (V)
NEW PRODUCT
T A = 150C
0.1
TA = 150C TA = 125C TA = 85C T A = 25C TA = -55C
0.1
TA = 125C T A = 85C T A = -55C TA = 25C
0.01 0.1
1 10 100 1,000 IC, COLLECTOR CURRENT (mA) Fig. 6 Typical Collector-Emitter Saturation Voltage vs. Collector Current
VBE(SAT), BASE-EMITTER SATURATION VOLTAGE (V)
0.01 0.1
1 10 100 1,000 IC, COLLECTOR CURRENT (mA) Fig. 7 Typical Collector-Emitter Saturation Voltage vs. Collector Current
Gain = 10
VBE(ON), BASE-EMITTER TURN-ON VOLTAGE (V)
1.1 1.0 0.9 0.8 0.7
TA = 25C TA = -55C VCE = 5V
1.2
1.0
0.8
TA = -55C
0.6 0.5 0.4 0.3 0.1
TA = 85C TA = 150C TA = 125C
0.6
TA = 25C TA = 150C
0.4
TA = 125C T A = 85C
1 10 100 1,000 IC, COLLECTOR CURRENT (mA) Fig. 8 Typical Base-Emitter Turn-On Voltage vs. Collector Current
TA = 25C Single, Non-Repetitive Pulse
0.2 0.1
1 10 100 1,000 IC, COLLECTOR CURRENT (mA) Fig. 9 Typical Base-Emitter Saturation Voltage vs. Collector Current
10
IC, COLLECTOR CURRENT (A)
1
PW = 1ms PW = 100s
DC
0.1
PW = 100ms
PW = 10ms
0.01
0.001 0.1
1 10 100 VCE, COLLECTOR EMITTER CURRENT (V) Fig. 10 Safe Operation Area (NPN)
DST3904DJ
Document number: DS32038 Rev. 2 - 2
4 of 6 www.diodes.com
April 2010
(c) Diodes Incorporated
DST3904DJ Package Outline Dimensions
D e1 L
E1
E
e
b (6 places)
c
A A1
SOT-963 Dim Min Max Typ A 0.40 0.50 0.45 A1 0 0.05 C 0.120 0.180 0.150 D 0.95 1.05 1.00 E 0.95 1.05 1.00 E1 0.75 0.85 0.80 L 0.05 0.15 0.10 b 0.10 0.20 0.15 e 0.35 Typ e1 0.70 Typ All Dimensions in mm
NEW PRODUCT
Suggest Pad Layout
C
C
Y1
Dimensions Value (in mm) C 0.350 X 0.200 Y 0.200 Y1 1.100
Y (6X)
X (6X)
DST3904DJ
Document number: DS32038 Rev. 2 - 2
5 of 6 www.diodes.com
April 2010
(c) Diodes Incorporated
DST3904DJ
IMPORTANT NOTICE DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDING TO THIS DOCUMENT, INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE (AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION). Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes without further notice to this document and any product described herein. Diodes Incorporated does not assume any liability arising out of the application or use of this document or any product described herein; neither does Diodes Incorporated convey any license under its patent or trademark rights, nor the rights of others. Any Customer or user of this document or products described herein in such applications shall assume all risks of such use and will agree to hold Diodes Incorporated and all the companies whose products are represented on Diodes Incorporated website, harmless against all damages. Diodes Incorporated does not warrant or accept any liability whatsoever in respect of any products purchased through unauthorized sales channel. Should Customers purchase or use Diodes Incorporated products for any unintended or unauthorized application, Customers shall indemnify and hold Diodes Incorporated and its representatives harmless against all claims, damages, expenses, and attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized application. Products described herein may be covered by one or more United States, international or foreign patents pending. Product names and markings noted herein may also be covered by one or more United States, international or foreign trademarks. LIFE SUPPORT Diodes Incorporated products are specifically not authorized for use as critical components in life support devices or systems without the express written approval of the Chief Executive Officer of Diodes Incorporated. As used herein: A. Life support devices or systems are devices or systems which: 1. are intended to implant into the body, or 2. support or sustain life and whose failure to perform when properly used in accordance with instructions for use provided in the labeling can be reasonably expected to result in significant injury to the user. B. A critical component is any component in a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or to affect its safety or effectiveness. Customers represent that they have all necessary expertise in the safety and regulatory ramifications of their life support devices or systems, and acknowledge and agree that they are solely responsible for all legal, regulatory and safety-related requirements concerning their products and any use of Diodes Incorporated products in such safety-critical, life support devices or systems, notwithstanding any devices- or systems-related information or support that may be provided by Diodes Incorporated. Further, Customers must fully indemnify Diodes Incorporated and its representatives against any damages arising out of the use of Diodes Incorporated products in such safety-critical, life support devices or systems. Copyright (c) 2010, Diodes Incorporated www.diodes.com
NEW PRODUCT
DST3904DJ
Document number: DS32038 Rev. 2 - 2
6 of 6 www.diodes.com
April 2010
(c) Diodes Incorporated

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